TO-92 EB102H-SHENZHEN SHENGYUAN SEMICONDUCTORS CO,.LTD._

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TO-92 EB102H

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Product details

Supply Ability

Warranty(Year)：1 Year

Product Specifications

Product Description

EB102H
FEATURES：	①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA
APPLICATION：	①FLUORESCENT LAMP ②ELECTRONIC BALLAST

Absolute Maximum Ratings (Tc=25℃)

TO-92 NPN

PARAMETER

SYMBOL

VALUE

UNIT

Collector–Base Voltage

VCBO

600

V

Collector–Emitter Voltage

VCEO

400

V

Emitter –Base Voltage

VEBO

9

V

Collector Current

IC

0.8

A

Total Power Dissipation

PC

10

W

Junction Temperature

Tj

150

℃

Storage Temperature

Tstg

-65-150

℃

Electronic Characteristics (Tc=25℃)

CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector–Base Cutoff Current

ICBO

VCB=600v

100

μA

Collector–Emitter Cutoff Current

ICEO

VCE=400v

250

μA

Collector–Emitter Voltage

VCEO

IC=10mA IB=0

400

V

Emitter –Base Voltage

VEBO

IE=1mA IC=0

9

V

Collector–Emitter Saturation Voltage

Vcesat

IC=0.1A IB=10mA

0.4

V

IC=0.5A IB=0.1A

0.8

V

Base–Emitter Saturation Voltage

Vbesat

IC=0.1A IB=10mA

1.0

V

DC Current Gain

HFE

VCE=5v IC=1mA

7

VCE=10v IC=0.1A

10

40

VCE=5v IC=0.8A

5

Storage Time

Ts

VCC=5V

IC=0.1A

2.5

4.5

μS

Falling Time

T_f

0.9

μS