TO-220 EB13005B-SHENZHEN SHENGYUAN SEMICONDUCTORS CO,.LTD._

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TO-220 EB13005B

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Product details

Supply Ability

Warranty(Year)：1 Year

Product Specifications

Product Description

EB13005B
FEATURES：	①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA
APPLICATION：	①FLUORESCENT LAMP ②ELECTRONIC BALLAST

Absolute Maximum Ratings (Tc=25℃)

TO-220 NPN

PARAMETER

SYMBOL

VALUE

UNIT

Collector–Base Voltage

VCBO

700

V

Collector–Emitter Voltage

VCEO

400

V

Emitter –Base Voltage

VEBO

9

V

Collector Current

IC

5.0

A

Total Power Dissipation

PC

75

W

Junction Temperature

Tj

150

℃

Storage Temperature

Tstg

-65-150

℃

Electronic Characteristics (Tc=25℃)

CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector–Base Cutoff Current

ICBO

VCB=700v

100

μA

Collector–Emitter Cutoff Current

ICEO

VCE=400v

250

μA

Collector–Emitter Voltage

VCEO

IC=10mA IB=0

400

V

Emitter –Base Voltage

VEBO

IE=1mA IC=0

9

V

Collector–Emitter Saturation Voltage

Vcesat

IC=1.0A IB=0. 2A

0.5

V

IC=4A IB=1A

1.5

V

Base–Emitter Saturation Voltage

Vbesat

IC=1.0A IB=0.2A

1.5

V

DC Current Gain

HFE

VCE=5v IC=10mA

7

VCE=5v IC=1.0A

10

40

VCE=5v IC=4.0A

5

Storage Time

Ts

VCC=5V

IC=0. 5A

2.0

4.0

μS

Falling Time

T_f

1.0

μS

Diode Forward Voltage

V_f

IF=2.0A

2.5

V

CLASSIFICATION OF HFE AND TS

HFE	10-15	15-20	20-25	25-30
TS	2.0-2.5	2.5-3.0	3.0-3.5	3.5-4.0

SYMBOL	Min	Nom	Max	SYMBOL	Min	Nom	Max
A	3.5	4.5	5.0	L	12.5	13.5	14.5
B	1.25	1.35	1.5	L1	2.5	3.37	4.5
B1	0.75	0.85	0.955	D1	5.9	6.5	7.1
b	0.6			фb			1.2
c	0.35	0.43	0.55	Q	1.5	2.5	3.5
D	14.0	15.5	16.5	Q1	2.0	2.6	3.5
E	9.0	10.0	11.0	Z	3.0	3.8	4.5
e		2.54