TO-92 EB13001-SHENZHEN SHENGYUAN SEMICONDUCTORS CO,.LTD._

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TO-92 EB13001

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Product details

Supply Ability

Warranty(Year)：1 Year

Product Specifications

Product Description

EB13001
FEATURES：	①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA
APPLICATION：	①FLUORESCENT LAMP ②ELECTRONIC BALLAST

Absolute Maximum Ratings (Tc=25℃)

TO-92 NPN

PARAMETER

SYMBOL

VALUE

UNIT

Collector–Base Voltage

VCBO

500

V

Collector–Emitter Voltage

VCEO

400

V

Emitter –Base Voltage

VEBO

9

V

Collector Current

IC

0.3

A

Total Power Dissipation

PC

7

W

Junction Temperature

Tj

150

℃

Storage Temperature

Tstg

-65-150

℃

Electronic Characteristics (Tc=25℃)

CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector–Base Cutoff Current

ICBO

VCB=500v

100

μA

Collector–Emitter Cutoff Current

ICEO

VCE=400v

250

μA

Collector–Emitter Voltage

VCEO

IC=10mA IB=0

400

V

Emitter –Base Voltage

VEBO

IE=1mA IC=0

9

V

Collector–Emitter Saturation Voltage

Vcesat

IC=0.05A IB=0.01A

0.4

V

IC=200mA IB=50mA

0.8

V

Base–Emitter Saturation Voltage

Vbesat

IC=50mA IB=10mA

1.1

V

DC Current Gain

HFE

VCE=5v IC=1mA

7

VCE=20v IC=20mA

10

40

VCE=5v IC=250mA

5

Storage Time

Ts

VCC=5V

IC=0.1A

0.5

2.5

μS

Falling Time

T_f

0.8

μS