TO-92 EB203DL-SHENZHEN SHENGYUAN SEMICONDUCTORS CO,.LTD._

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TO-92 EB203DL

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Product details

Supply Ability

Warranty(Year)：1 Year

Product Specifications

Product Description

EB203DL
FEATURES：	①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA
APPLICATION：	①FLUORESCENT LAMP ②ELECTRONIC BALLAST

Absolute Maximum Ratings (Tc=25℃)

TO-92 NPN

PARAMETER

SYMBOL

VALUE

UNIT

Collector–Base Voltage

VCBO

400

V

Collector–Emitter Voltage

VCEO

200

V

Emitter –Base Voltage

VEBO

9

V

Collector Current

IC

2

A

Total Power Dissipation

PC

12

W

Junction Temperature

Tj

150

℃

Storage Temperature

Tstg

-65-150

℃

Electronic Characteristics (Tc=25℃)

CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector–Base Cutoff Current

ICBO

VCB=400v

100

μA

Collector–Emitter Cutoff Current

ICEO

VCE=200v

250

μA

Collector–Emitter Voltage

VCEO

IC=10mA IB=0

200

V

Emitter –Base Voltage

VEBO

IE=1mA IC=0

9

V

Collector–Emitter Saturation Voltage

Vcesat

IC=0.5A IB=0.1A

0.5

V

IC=1.5A IB=0.5A

1.0

V

Base–Emitter Saturation Voltage

Vbesat

IC=1.5A IB=0.5A

1.5

V

DC Current Gain

HFE

VCE=5v IC=1mA

7

VCE=5v IC=0.2A

10

40

VCE=5v IC=2A

5

Storage Time

Ts

VCC=5V IC=0.25A

1.5

3.5

μS

Diode Forward Voltage

V_f

IF=1.0A

2

V