TO-92 EB102-SHENZHEN SHENGYUAN SEMICONDUCTORS CO,.LTD.__Lightstrade

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TO-92 EB102

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Product details

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Warranty(Year)：1 Year

Product Specifications

Product Description

EB102
FEATURES：	①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA
APPLICATION：	①FLUORESCENT LAMP ②ELECTRONIC BALLAST

Absolute Maximum Ratings (Tc=25℃)

TO-92 NPN

PARAMETER	SYMBOL	VALUE	UNIT
Collector–Base Voltage	VCBO	600	V
Collector–Emitter Voltage	VCEO	400	V
Emitter –Base Voltage	VEBO	9	V
Collector Current	IC	0.4	A
Total Power Dissipation	PC	8	W
Junction Temperature	Tj	150	℃
Storage Temperature	Tstg	-65-150	℃

Electronic Characteristics (Tc=25℃)

CHARACTERISTICS	SYMBOL	TEST CONDITION	MIN	MAX	UNIT
Collector–Base Cutoff Current	ICBO	VCB=600v		100	μA
Collector–Emitter Cutoff Current	ICEO	VCE=400v		250	μA
Collector–Emitter Voltage	VCEO	IC=10mA IB=0	400		V
Emitter –Base Voltage	VEBO	IE=1mA IC=0	9		V
Collector–Emitter Saturation Voltage	Vcesat	IC=0.1A IB=10mA		0.5	V
Collector–Emitter Saturation Voltage	Vcesat	IC=0.4A IB=0.1A		0.7	V
Base–Emitter Saturation Voltage	Vbesat	IC=0.1A IB=10mA		1.0	V
DC Current Gain	HFE	VCE=5v IC=1mA	7
		VCE=10v IC=50mA	10	40
		VCE=5v IC=0.4A	5
Storage Time	Ts	VCC=5V IC=0.1A	1.0	3.0	μS
Falling Time	T_f	VCC=5V IC=0.1A		0.9	μS

CLASSIFICATION OF HFE AND TS

HFE	10-15	15-20	20-25	25-30
TS	1.0-1.5	1.5-2.0	2.0-2.5	2.5-3.0

SYMBOL	Min	Nom	Max
A	4.3		5.3
b	0.3
c	0.3
D	4.3		5.2
d	1.0		1.7
E	3.2		4.2
e		2.54
e1		1.27
L	12.7
L1			2.0

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