TO-126 EB13003F-SHENZHEN SHENGYUAN SEMICONDUCTORS CO,.LTD._

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TO-126 EB13003F

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Product details

Supply Ability

Warranty(Year)：1 Year

Product Specifications

Product Description

EB13003F
FEATURES：	①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA
APPLICATION：	①FLUORESCENT LAMP ②ELECTRONIC BALLAST

Absolute Maximum Ratings (Tc=25℃)

TO-126 NPN

PARAMETER

SYMBOL

VALUE

UNIT

Collector–Base Voltage

VCBO

600

V

Collector–Emitter Voltage

VCEO

400

V

Emitter –Base Voltage

VEBO

9

V

Collector Current

IC

1.2

A

Total Power Dissipation

PC

25

W

Junction Temperature

Tj

150

℃

Storage Temperature

Tstg

-65-150

℃

Electronic Characteristics (Tc=25℃)

CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector–Base Cutoff Current

ICBO

VCB=600v

100

μA

Collector–Emitter Cutoff Current

ICEO

VCE=400v

250

μA

Collector–Emitter Voltage

VCEO

IC=10mA IB=0

400

V

Emitter –Base Voltage

VEBO

IE=1mA IC=0

9

V

Collector–Emitter Saturation Voltage

Vcesat

IC=0.5A IB=0.1A

0.5

V

IC=1A IB=0.5A

0.6

V

Base–Emitter Saturation Voltage

Vbesat

IC=0.5A IB=0.1A

1.2

V

DC Current Gain

HFE

VCE=5v IC=1mA

7

VCE=10v IC=0.1A

10

40

VCE=5v IC=1A

5

Storage Time

Ts

VCC=5V

IC=0.25A

1.5

3.5

μS

Falling Time

T_f

1.0

μS

CLASSIFICATION OF HFE AND TS

HFE	10-15	15-20	20-25	25-30
TS	1.5-2.0	2.0-2.5	2.5-3.0	3.0-3.5

SYMBOL	Min	Nom	Max	SYMBOL	Min	Nom	Max
A	2.3		2.8	L	15.3		16.5
B	1.0		1.2	L1			2.54
B1	0.8		1.0	P	3.0		3.2
b	0.65		0.88	P1		5.0
c	.45		0.60	Q	3.6		4.4
D	10.5		11.1	Q1	0.9		1.5
E	7.2		7.8	R		0.5
e		2.29