TO-220 EB13003S-SHENZHEN SHENGYUAN SEMICONDUCTORS CO,.LTD._

Home > Products > Light Source > Traditional Light Source >Other Traditional Light Sources

TO-220 EB13003S

MOQ ： piece

Lead Time ： Days

Inquiry Start Order

Seller Support : Trade Authenticity Guaranteed & Accepting

Payment : L/C，T/T，Western Union, Money Gram, Credit Card, Paypal

Product details

Supply Ability

Warranty(Year)：1 Year

Product Specifications

Product Description

EB13003S
FEATURES：	①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA
APPLICATION：	①FLUORESCENT LAMP ②ELECTRONIC BALLAST

Absolute Maximum Ratings (Tc=25℃)

TO-220 NPN

PARAMETER

SYMBOL

VALUE

UNIT

Collector–Base Voltage

VCBO

600

V

Collector–Emitter Voltage

VCEO

400

V

Emitter –Base Voltage

VEBO

9

V

Collector Current

IC

1.5

A

Total Power Dissipation

PC

30

W

Junction Temperature

Tj

150

℃

Storage Temperature

Tstg

-65-150

℃

Electronic Characteristics (Tc=25℃)

CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector–Base Cutoff Current

ICBO

VCB=600v

100

μA

Collector–Emitter Cutoff Current

ICEO

VCE=400v

250

μA

Collector–Emitter Voltage

VCEO

IC=10mA IB=0

400

V

Emitter –Base Voltage

VEBO

IE=1mA IC=0

9

V

Collector–Emitter Saturation Voltage

Vcesat

IC=0.5A IB=0.1A

0.35

V

IC=1.5A IB=0.5A

0.85

V

Base–Emitter Saturation Voltage

Vbesat

IC=0.5A IB=0.1A

1.2

V

DC Current Gain

HFE

VCE=5v IC=1mA

7

VCE=10v IC=0.1A

10

40

VCE=5v IC=1.5A

5

Storage Time

Ts

VCC=5V

IC=0.25A

1.5

3.5

μS

Falling Time

T_f

1.0

μS

CLASSIFICATION OF HFE AND TS

HFE	10-15	15-20	20-25	25-30
TS	1.5-2.0	2.0-2.5	2.5-3.0	3.0-3.5

SYMBOL	Min	Nom	Max	SYMBOL	Min	Nom	Max
A	3.5	4.5	5.0	L	12.5	13.5	14.5
B	1.25	1.35	1.5	L1	2.5	3.37	4.5
B1	0.75	0.85	0.955	D1	5.9	6.5	7.1
b	0.6			фb			1.2
c	0.35	0.43	0.55	Q	1.5	2.5	3.5
D	14.0	15.5	16.5	Q1	2.0	2.6	3.5
E	9.0	10.0	11.0	Z	3.0	3.8	4.5
e		2.54